2SC4787 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For intermediate frequency amplification)

Transistor
2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
s ^Features
q High transition frequency f_T.
q Satisfactory linearity of forward current transfer ratio h_FE.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
45
V
Collector to emitter voltage V_CEO
35
V
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.45^{+–00..015}
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
I_CBO
V_CBO
V_CEO
V_EBO
V_CB = 20V, I_E = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
0.1
µA
45
V
35
V
4
V
Forward current transfer ratio
h_FE
Collector to emitter saturation voltage V_CE(sat)
V_CE = 10V, I_C = 10mA
I_C = 20mA, I_B = 2mA
20
50
100
0.5
V
Common emitter reverse transfer capacitance C_re
V_CB = 10V, I_E = –1mA, f = 10.7MHz
1.5
pF
Power gain
Transition frequency
PG
V_CB = 10V, I_E = –10mA, f = 58MHz
18
f_T
V_CB = 10V, I_E = –10mA, f = 100MHz
300
500
dB
MHz
1