2SC4782 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high speed switching)

Transistor
2SC4782
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
s ^Features
q High-speed switching.
q Low collector to emitter saturation voltage V_CE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
25
V
Collector to emitter voltage V_CES
20
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
200
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : DV
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
Emitter cutoff current
I_EBO
Forward current transfer ratio
h_FE*
V_CB = 10V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 1V, I_C = 10mA
0.1
µA
0.1
µA
40
200
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
0.17 0.25
V
Base to emitter saturation voltage V_BE(sat)
I_C = 10mA, I_B = 1mA
0.76
1.0
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
200
500
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
2
4
pF
Turn-on time
t_on
17
ns
Turn-off time
t_off
Refer to the measurment circuit
15
ns
Storage time
t_stg
7
ns
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
P
40 ~ 80
DVP
Q
60 ~ 120
DVQ
R
90 ~ 200
DVR
1