2SC4691J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For High-Speed Switching

Transistors
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
40
V
Collector-emitter voltage (E-B short) V_CES
40
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
100
mA
Peak collector current
I_CP
300
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 2Y
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) I_CBO V_CB = 40 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 4 V, I_C = 0
Forward current transfer ratio ^*
h_FE V_CE = 1 V, I_C = 10 mA
60
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 1 mA
Base-emitter saturation voltage
V_BE(sat) I_C = 10 mA, I_B = 1 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1.0
450
2
6
µA
µA

V
V
MHz
pF
Turn-on time
Turn-off time
Storage time
t_on Refer to the measurement circuit
t_off
t_stg
17
ns
17
ns
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
No-rank
h_FE
60 to 120
90 to 200
60 to 200
Product of no-rank is not classified and have no indication for rank.
Publication date: January 2003
SJC00282BED
1