2SC4627J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For High-Frequency Amplification

Transistors
2SC4627J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f_T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
15
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
Marking Symbol: U
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
30
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
3
V
Base-emitter voltage
V_BE V_CB = 6 V, I_E = −1 mA
720
mV
Forward current transfer ratio ^*
h_FE V_CB = 6 V, I_E = −1 mA
65
160

Transition frequency
f_T
V_CB = 6 V, I_E = −1 mA, f = 200 MHz
450 650
MHz
Reverse transfer capacitance
(Common emitter)
C_re V_CB = 6 V, I_E = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
G_P V_CB = 6 V, I_E = −1 mA, f = 100 MHz
24
dB
NF V_CB = 6 V, I_E = −1 mA, f = 100 MHz
3.3
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
C
h_FE
65 to 160
Publication date: March 2003
SJC00163AED
1