2SC4627 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC4627
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
15
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : U
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
V_CBO
V_EBO
h_FE*
I_C = 10µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 6V, I_E = –1mA
30
V
3
V
40
260
Base to emitter voltage
V_BE
V_CB = 6V, I_E = –1mA
0.72
V
Transition frequency
f_T
V_CB = 6V, I_E = –1mA, f = 200MHz
450
650
MHz
Common emitter reverse transfer capacitance C_re
V_CB = 6V, I_E = –1mA, f = 10.7MHz
0.8
1
pF
Power gain
PG
V_CB = 6V, I_E = –1mA, f = 100MHz
24
dB
Noise figure
NF
V_CB = 6V, I_E = –1mA, f = 100MHz
3.3
dB
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
B
40 ~ 110
UB
C
65 ~ 160
UC
D
100 ~ 260
UD
1