2SC4626J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For High-Frequency Amplification

Transistors
2SC4626J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f_T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
Marking Symbol: V
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
0.1
µA
Forward current transfer ratio ^*
h_FE V_CB = 10 V, I_E = −1 mA
70
220

Transition frequency
f_T
V_CB = 10 V, I_E = −1 mA, f = 200 MHz 150 250
MHz
Noise figure
NF V_CB = 10 V, I_E = −1 mA, f = 5 MHz
2.8 4.0
dB
Reverse transfer impedance
Z_rb V_CB = 10 V, I_E = −1 mA, f = 2 MHz
22 50
Ω
Common-emitter reverse transfer
capacitance
C_re V_CB = 10 V, I_E = −1 mA, f = 10.7 MHz
0.9 1.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
No-rank
h_FE
70 to 140 110 to 220 70 to 220
Product of no-rank is not classified and have no indication for rank.
Publication date: December 2002
SJC00281BED
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