2SC4606 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Transistor
2SC4606
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1762
s ^Features
q High collector to emitter voltage V_CEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = 20V, I_E = 0
0.1
µA
I_C = 10µA, I_E = 0
80
V
I_C = 100µA, I_B = 0
80
V
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 150mA^*2
130
330
V_CE = 5V, I_C = 500mA^*2
50
100
I_C = 300mA, I_B = 30mA^*2
0.2
0.4
V
I_C = 300mA, I_B = 30mA^*2
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
120
MHz
V_CB = 10V, I_E = 0, f = 1MHz
11
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
R
S
h_FE1
130 ~ 220 185 ~ 330
1