2SC4562 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC4562
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1748
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : AM
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 10V, I_E = 0
V_CE = 10V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
100
µA
50
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 2mA
50
V
5
V
200
500
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
0.06
0.3
V
Transition frequency
f_T
V_CB = 10V, I_E = –2mA, f = 200MHz
250
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
1.5
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
200 ~ 400
AMQ
R
250 ~ 500
AMR
1