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2SC4533 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
VCES
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Base current
IB
1.2
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
ICBO
VCB = 500V, IE = 0
IEBO
VEB = 5V, IC = 0
100
µA
100
µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
V
hFE1
Forward current transfer ratio
hFE2
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
10
8
40
Collector to emitter saturation voltage VCE(sat)
IC = 1.5A, IB = 0.3A
1.0
V
Base to emitter saturation voltage VBE(sat)
IC = 1.5A, IB = 0.3A
1.5
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
VCE = 10V, IC = 0.2A, f = 1MHz
ton
IC = 1.5A, IB1 = 0.15A, IB2 = â 0.3A,
tstg
VCC = 200V
tf
10
MHz
1.0
µs
3.0
µs
0.3
µs
1
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