2SC4502 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For mtermediate frequency amplification)

Transistor
2SC4502
Silicon NPN epitaxial planer type
For mtermediate frequency amplification
s ^Features
q High transition frequency f_T.
q Large collector power dissipation P_C.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage
V_CEO
45
V
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
0.45^{+–00..015}
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
I_CBO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
C_re
PG
V_CB = 20V, I_E = 0
I_C = 100µA, I_E = 0
50
I_C = 1mA, I_B = 0
45
I_E = 100µA, I_C = 0
4
V_CE = 10V, I_C = 10µA
20
I_C = 20mA, I_B = 2mA
V_CB = 10V, I_E = –10mA, f = 200MHz
300
V_CB = 10V, I_E = –1mA, f = 10.7MHz
V_CB = 10V, I_E = –10mA, f = 58MHz
22
100
nA
V
V
V
100
0.4
V
MHz
1.5
pF
30
dB
1