2SC4417 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s ^Features
q High transition frequency f_T.
q Satisfactory linearity of forward current transfer ratio h_FE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
45
V
Collector to emitter voltage V_CEO
35
V
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 2Z
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CEO
V_CBO
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
10
µA
45
V
Collector to emitter voltage
V_CEO
I_E = 1mA, I_B = 0
35
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
4
V
Forward current transfer ratio
h_FE
V_CB = 10V, I_E = –10mA
20
50
100
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 2mA
0.5
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
500
MHz
Common emitter reverse transfer capacitance C_re
V_CB = 10V, I_E = –1mA, f = 10.7MHz
1.5
pF
1