2SC4410 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF amplification)

Transistor
2SC4410
Silicon NPN epitaxial planer type
For UHF amplification
Unit: mm
s ^Features
q Allowing the small current and low voltage operation.
q High transition frequency f_T.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
10
V
Collector to emitter voltage V_CEO
7
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
10
mA
Collector power dissipation P_C
50
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 2X
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
I_CBO
I_EBO
h_FE
f_T
C_ob
| S_21e |²
GUM
NF
V_CB = 10V, I_E = 0
V_EB = 1.5V, I_C = 0
V_CE = 1V, I_C = 1mA
V_CE = 1V, I_C = 1mA, f = 800MHz
V_CB = 1V, I_E = 0, f = 1MHz
V_CE = 1V, I_C = 1mA, f = 800MHz
V_CE = 1V, I_C = 1mA, f = 800MHz
V_CE = 1V, I_C = 1mA, f = 800MHz
50
4
0.4
6.0
15
3.5
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
max Unit
1
µA
1
µA
200
GHz
pF
dB
dB
dB
1