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| 2SC3980 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Power Transistors
2SC3980, 2SC3980A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3980
900
base voltage 2SC3980A
VCBO
1000
V
Collector to 2SC3980
900
emitter voltage 2SC3980A
VCES
1000
V
Collector to emitter voltage VCEO
800
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
4
A
Base current
IB
2
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
70
W
3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff
2SC3980
current
2SC3980A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 5V, IC = 0.2A, f = 1MHz
IC = 2A, IB1 = 0.4A, IB2 = â 0.8A,
VCC = 250V
Unit: mm
15.0±0.3
11.0±0.2
Ï3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOPâ3 Full Pack Package(a)
min
typ
max Unit
50
µA
50
50
µA
800
V
8
6
1.5
V
1.5
V
15
MHz
0.7
µs
2.5
µs
0.3
µs
1
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