2SC3944 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification)

Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
s ^Features
q Satisfactory foward current transfer ratio h_FE vs. collector cur-
rent I_C characteristics
q High transition frequency f_T
q Makes up a complementary pair with 2SA1535 and 2SA1535A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3944
150
base voltage 2SC3944A
V_CBO
180
V
Collector to 2SC3944
150
V_CEO
V
emitter voltage 2SC3944A
180
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
Collector current
I_C
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
1.5
A
1
A
15
W
2.0
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
current
Collector to base
voltage
2SC3944
2SC3944A
2SC3944
2SC3944A
I_CBO
V_CEO
V_CB = 150V, I_E = 0
V_CB = 180V, I_E = 0
I_C = 1mA, I_B = 0
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 150mA
V_CE = 5V, I_C = 500mA
I_C = 500mA, I_B = 50mA
I_C = 500mA, I_B = 50mA
V_CB = 10V, I_E = –50mA, f = 10MHz
V_CB = 10V, I_E = 0, f = 1MHz
*_{hFE1 Rank classification}
Rank
h_FE1
Q
R
95 to 155 130 to 220
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
10
µA
10
150
V
180
5
V
95
160 220
50
100
0.5
2
V
1
2
V
200
MHz
30
50
pF
1