2SC3943 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For video amplifier)

Power Transistors
2SC3943
Silicon NPN epitaxial planar type
For video amplifier
s ^Features
q Small transition frequency f_T
q Small collector output capacitance C_ob
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
110
V
V_CER
100
V
Collector to emitter voltage
V_CEO
50
V
Emitter to base voltage
V_EBO
3.5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
150
mA
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
8
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CEO
V_CBO
V_CER
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T1
f_T2
C_ob
V_CE = 35V, I_B = 0
10
µA
I_C = 100µA, I_E = 0
110
V
I_C = 500µA, R_BE = 470Ω
100
V
I_C = 1mA, I_B = 0
50
V
I_E = 100µA, I_C = 0
3.5
V
V_CE = 5V, I_C = 100mA
20
I_C = 150mA, I_B = 15mA
0.5
V
V_CE = 10V, I_C = 10mA, f = 10MHz
300
MHz
V_CE = 10V, I_C = 110mA, f = 10MHz
350
MHz
V_CB = 30V, I_E = 0, f = 1MHz
3.5
pF
1