2SC3940ARA Datasheet, PDF (1/4 Pages) –

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency output amplification and driver amplification
Complementary to 2SA1534, 2SA1534A
■ Features
/ _{• Low collector-emitter saturation voltage VCE(sat)}
• Allowing supply with the radial taping
e _{e. ■ Absolute Maximum Ratings Ta = 25°C}
c _{tag Parameter}
Symbol Rating
Unit
n ^d le ^s Collector-base voltage ^{2SC3940 V}CBO
30
V
yc _{(Emitter open)}
2SC3940A
60
a ^e lifec Collector-emitter voltage 2SC3940 V_CEO
25
V
ct _{(Base open)}
2SC3940A
50
n ^u _rodu Emitter-base voltage (Collector open) V_EBO
5
V
P _{Collector current}
I_C
1
A
te ^{tin four Peak collector current}
I_CP
1.5
A
ing _type ^{n. Collector power dissipation}
P_C
1
W
in ^{n llow e tio Junction temperature}
T_j
150
°C
fo anc pe ^{ed rma Storage temperature}
T_stg −55 to +150 °C
a _{coed inclueddesmaintteennancettiynued} ^ttyyppe _test ^{info.jp/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C}
u ^{n in on d t la .co Parameter}
Symbol
Conditions
M _is tin ^{la a isc ue ou nic Collector-base voltage}
p ^m d tin ^{ab so (Emitter open)}
2SC3940 V_CBO
2SC3940A
I_C = 10 µA, I_E = 0
iscon ^{ned con RL ana Collector-emitter voltage}
/D ^{pla dis g U n.p (Base open)}
2SC3940 V_CEO
2SC3940A
I_C = 2 mA, I_B = 0
e ^{in ico} Emitter-base voltage (Collector open)
D_{anc llow em Collector-base cutoff current (Emitter open)}
inten ^{it fo w.s Forward current transfer ratio *1}
Ma e ^{vis ://ww} _{Collector-emitter saturation voltage*1}
Pleas ^{http Base-emitter saturation voltage*1}
V_EBO
I_CBO
h_FE1 ^*2
h_FE2
V_CE(sat)
V_BE(sat)
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_E = 0
V_CE = 10 V, I_C = 500 mA
V_CE = 5 V, I_C = 1 A
I_C = 500 mA, I_B = 50 mA
I_C = 500 mA, I_B = 50 mA
5.0±0.2
4.0±0.2
0.7±0.1
0.45^{+–00..12}
(1.27)
(1.27)
0.45^{+–00..115}
123
1: Emitter
2: Collector
2.54±0.15
3: Base
TO-92NL-A1 Package
Min Typ Max Unit
30
V
60
25
V
50
5
V
0.1
µA
85
340

50

0.2 0.4
V
0.85 1.20
V
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
11 20
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h_FE1
85 to 170 120 to 240 170 to 340
Publication date: March 2003
SJC00150BED
1