2SC3940 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

Transistor
2SC3940, 2SC3940A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534 and 2SA1534A
s ^Features
5.0±0.2
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SC3940
30
base voltage 2SC3940A
V_CBO
60
V
Collector to 2SC3940
25
emitter voltage 2SC3940A
V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base 2SC3940
voltage
2SC3940A
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
30
V
60
Collector to emitter 2SC3940
25
V_CEO
I_C = 2mA, I_B = 0
V
voltage
2SC3940A
50
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
*1_{hFE1 Rank classification}
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 500mA^*2
85
340
V_CE = 5V, I_B = 1A^*2
50
I_C = 500mA, I_B = 50mA^*2
0.2
0.4
V
I_B = 500mA, I_a = 50mA^*2
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f = 1MHz
11
20
pF
*2 _{Pulse measurement}
Rank
Q
R
S
h_FE1
85 ~ 170 120 ~ 240 170 ~ 340
1