2SC3938 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high speed switching)

Transistor
2SC3938
Silicon NPN epitaxial planer type
For high speed switching
s ^Features
q High-speed switching.
q Low collector to emitter saturation voltage V_CE(sat).
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
q Allowing pair use with 2SA1739.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
40
V
Collector to emitter voltage V_CES
40
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 2Y
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
Emitter cutoff current
I_EBO
Forward current transfer ratio
h_FE*
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 1V, I_C = 10mA
0.1
µA
0.1
µA
60
200
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
V_CE(sat)
V_BE(sat)
f_T
I_C = 10mA, I_B = 1mA
I_C = 10mA, I_B = 1mA
V_CB = 10V, I_E = –10mA, f = 200MHz
0.17 0.25
V
1.0
V
450
MHz
Collector output capacitance
C_ob
Turn-on time
t_on
Turn-off time
t_off
V_CB = 10V, I_E = 0, f = 1MHz
Refer to the measurment circuit
2
6
pF
17
ns
17
ns
Storage time
t_stg
10
ns
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
60 ~ 120
2YQ
R
90 ~ 200
2YR
1