2SC3936 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC3936
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : K
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
V_CBO
V_CEO
V_EBO
h_FE*
f_T
I_C = 10µA, I_E = 0
30
V
I_C = 2mA, I_B = 0
20
V
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 1mA
70
250
V_CB = 10V, I_E = –1mA, f = 200MHz 150
230
MHz
Common emitter reverse transfer capacitance C_re
V_CE = 10V, I_C = 1mA, f = 10.7MHz
1.3
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
B
70 ~ 160
KB
C
110 ~ 250
KC
1