2SC3932 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Transistors
2SC3932
Silicon NPN epitaxial planer type
For high-frequency amplification / oscillation / mixing
I Features
• High transition frequency f_T
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
30
V
V_CEO
20
V
V_EBO
3
V
I_C
50
mA
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.3^{+–00..01}
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15^{+–00..0150}
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: R
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency ^*
Common emitter reverse transfer
capacitance
Power gain
Note) *: Rank classification
Symbol
V_CBO
V_EBO
h_FE
V_BE
f_T
C_re
C_rb
PG
Conditions
Min
I_C = 100 µA, I_E = 0
30
I_E = 10 µA, I_C = 0
3
V_CB = 10 V, I_E = −2 mA
25
V_CB = 10 V, I_E = −2 mA
V_CB = 10 V, I_E = −15 mA, f = 200 MHz 800
V_CB = 10 V, I_E = −1 mA, f = 10.7 MHz
V_CE= 6 V, I_C = 0, f = 1 MHz
V_CB = 10 V, I_E = −1 mA, f = 200 MHz
Rank
T
S
No-rank
f_T (MHz)
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Typ Max Unit
V
V
250
720
mV
1 600 MHz
1
1.5
pF
0.8
pF
20
dB
1