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| 2SC3929 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification) | |||
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Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3929
35
base voltage 2SC3929A
VCBO
55
V
Collector to 2SC3929
35
emitter voltage 2SC3929A
VCEO
55
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation PC
150
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
s Electrical Characteristics (Ta=25ËC)
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SCâ70
SâMini Type Package
Marking symbol : S(2SC3929)
T(2SC3929A)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SC3929
2SC3929A
ICBO
ICEO
VCBO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
100
nA
1
µA
35
V
55
Collector to emitter 2SC3929
35
VCEO
IC = 2mA, IB = 0
V
voltage
2SC3929A
55
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
VEBO
hFE*
VCE(sat)
VBE
Noise voltage
NV
Transition frequency
fT
*1hFE1 Rank classification
IE = 10µA, IC = 0
5
V
VCE = 5V, IC = 2mA
180
700
IC = 100mA, IB = 10mA
0.6
V
VCE = 1V, IC = 100mA
0.7
1
V
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kâ¦, Function = FLAT
150
mV
VCB = 5V, IE = â2mA, f = 200MHz
80
MHz
Rank
R
S
T
hFE
Marking 2SC3929
Symbol 2SC3929A
180 ~ 360
SR
TR
260 ~ 520
SS
TS
360 ~ 700
ST
TT
1
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