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2SC3824 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type
Power Transistors
2SC3824, 2SC3824A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
900
V
Collector-emitter voltage (E-B short) VCES
900
V
Collector-emitter voltage 2SC3824 VCEO
800
V
(Base open)
2SC3824A
900
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
1
A
Peak collector current
ICP
2
A
Collector power
PC
15
W
dissipation
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SC3824 VCEO
2SC3824A
IC = 1 mA, IB = 0
800
V
900
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 0.05 A
VCE = 5 V, IC = 0.5 A
IC = 0.2 A, IB = 0.04 A
IC = 0.2 A, IB = 0.04 A
VCE = 10 V, IC = 0.05 A, f = 1 MHz
IC = 0.2 A
IB1 = 0.04 A, IB2 = − 0.08 A
VCC = 250 V
50
µA
50
µA
6

3
1.5
V
1.0
V
4
MHz
1.0
µs
3.0
µs
1.0
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00113AED
1
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