2SC3811 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high speed switching)

Transistor
2SC3811
Silicon NPN epitaxial planer type
For high speed switching
s ^Features
q High-speed switching.
q Low collector to emitter saturation voltage V_CE(sat).
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
40
V
Collector to emitter voltage V_CES
40
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Base
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
I_CBO
I_EBO
h_FE*
V_CE(sat)
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
V_CE = 1V, I_C = 10mA
I_C = 10mA, I_B = 1mA
0.1
µA
0.1
µA
60
200
0.17 0.25
V
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_BE(sat)
f_T
C_ob
I_C = 10mA, I_B = 1mA
V_CB = 10V, I_E = –10mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
1.0
V
450
MHz
2
6
pF
Turn-on time
Turn-off time
Storage time
t_on
t_off
Refer to the measurment circuit
t_stg
17
ns
17
ns
10
ns
*_{hFE Rank classification}
Rank
Q
h_FE
60 ~ 120
R
90 ~ 200
1