2SC3795 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3795
800
V_CBO
V
base voltage 2SC3795A
900
Collector to 2SC3795
800
V_CES
V
emitter voltage 2SC3795A
900
Collector to emitter voltage V_CEO
500
V
Emitter to base voltage
V_EBO
8
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
T_j
150
Storage temperature
T_stg
–55 to +150
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
˚C
˚C
Conditions
Collector cutoff
current
2SC3795
2SC3795A ^ICBO
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
2SC3795
2SC3795A
I_EBO
V_CEO(sus)*
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
Storage time
Fall time
t_stg
2SC3795
2SC3795A ^tf
V_CB = 800V, I_E = 0
V_CB = 900V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 0.2A, L = 25mH
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 3A
I_C = 3A, I_B = 0.6A
I_C = 3A, I_B = 0.6A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 0.6A, I_B2 = – 0.6A,
V_CC = 200V
*_{VCEO(sus) Test circuit}
50/60Hz
mercury relay
X
L 25mH
120Ω
6V
Y
1Ω
15V
G
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
100
µA
100
100
µA
500
V
15
8
1
V
1.5
V
8
MHz
1
µs
1.2
3
µs
1
µs
1.2
1