2SC3757 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high speed switching)

Transistors
2SC3757
Silicon NPN epitaxial planer type
For high speed switching
I Features
• High-speed switching
• Low collector to emitter saturation voltage V_CE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
• Allowing pair use with 2SA1738
0.40^{+–00..0150}
3
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10°
Unit: mm
0.16^{+–00..0160}
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
40
V
V_CES
40
V
V_EBO
5
V
I_CP
300
mA
I_C
100
mA
P_C
200
mW
T_j
150
°C
T_stg
−55 to +150
°C
1: Base
2: Emitter
3: Collector
Marking Symbol: 2Y
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio ^*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_off
t_stg
V_CB = 15 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 1 V, I_C = 10 mA
60
I_C = 10 mA, I_B = 1 mA
I_C = 10 mA, I_B = 1 mA
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
Refere to the measurement circuit
Note) *: Rank classification
Rank
Q
R
h_FE
Marking symbol
60 to 120
2YQ
90 to 200
2YR
Typ Max
0.1
0.1
200
0.17 0.25
1.0
450
2
6
17
17
10
Unit
µA
µA
V
V
MHz
pF
ns
ns
ns
1