2SC3707 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF amplification)

Transistor
2SC3707
Silicon NPN epitaxial planer type
For UHF amplification
s ^Features
q Possible with the small current and low voltage.
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
10
V
Collector to emitter voltage V_CEO
7
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
10
mA
Collector power dissipation P_C
50
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Bae
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2X
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 1.5V, I_C = 0
Forward current transfer ratio
h_FE
V_CE = 1V, I_C = 1mA
50
100
Transition frequency
f_T
V_CE = 1V, I_C = 1mA, f = 800MHz
4
Collector output capacitance
C_ob
V_CB = 1V, I_E = 0, f = 1MHz
0.4
Foward transfer gain
| S_21e |²
V_CE = 1V, I_C = 1mA, f = 800MHz
6
Maximum unilateral power gain GUM
V_CE = 1V, I_C = 1mA, f = 800MHz
15
Noise figure
NF
V_CE = 1V, I_C = 1mA, f = 800MHz
3.5
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.
1
nA
1
µA
150
GHz
pF
dB
dB
dB
1