2SC3704 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
2SC3704
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Bae
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :2W
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
I_EBO
V_CB = 15V, I_E = 0
V_EB = 1V, I_C = 0
1
µA
1
µA
h_FE1
Forward current transfer ratio
h_FE2
V_CE = 8V, I_C = 20mA
V_CE = 1V, I_C = 3mA
50
150 300
80
280
Transition frequency
f_T
V_CE = 8V, I_C = 20mA, f = 0.8GHz
6
GHz
Collector output capacitance
C_ob
V_CE = 10V, I_E = 0, f = 1MHz
0.7
1.2
pF
Noise figure
NF
V_CE = 8V, I_C = 7mA, f = 800MHz
1.0
1.7
dB
Maximum unilateral power gain GUM
V_CE = 8V, I_C = 20mA, f = 800MHz
14
dB
Foward transfer gain
| S_21e |²
V_CE = 8V, I_C = 20mA, f = 800MHz
13
dB
1