2SC3611 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For video amplifier)

Power Transistors
2SC3611
Silicon NPN epitaxial planar type
For video amplifier
I Features
• High transition frequency f_T
• Small collector output capacitance C_ob
• Wide current range
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
8.0⁺_–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
110
V
Collector to emitter voltage
V_CER
100
V
V_CEO
50
V
Emitter to base voltage
V_EBO
3.5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
150
mA
Collector power TC = 25°C
P_C
1.2
W
dissipation
T_a = 25°C
4.0 ^*
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *: With a 100 × 100 × 2 mm A1 heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1 : Base
123
2 : Collector
3 : Emitter
TO-126B-A1 Package
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CEO
V_CBO
V_CER
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T1
f_T2
C_ob
V_CE = 35 V, I_B = 0
I_C = 100 µA, I_E = 0
110
I_C = 500 µA, R_BE = 470 Ω
100
I_C = 1 mA, I_B = 0
50
I_E = 100 µA, I_C = 0
3.5
V_CE = 5 V, I_C = 100 mA
20
I_C = 150 mA, I_B = 15 mA
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
V_CB = 10 V, I_E = −110 mA, f = 200 MHz
V_CB = 30 V, I_E = 0, f = 1 MHz
Typ Max
10
0.5
300
350
3
Unit
µA
V
V
V
V
V
MHz
MHz
pF
201