2SC3526H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Display Video Output

Transistors
2SC3526H
Silicon NPN epitaxial planar type
For display video output
■ Features
• High transition frequency f_T
• Small collector output capacitance (Common base, input open cir-
cuited) C_ob
• Wide current range
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
110
V
Collector-emitter voltage
V_CER
100
V
(Resistor between B and E)
Collector-emitter voltage (Base open) V_CEO
50
V
Emitter-base voltage (Collector open) V_EBO
3.5
V
Collector current
I_C
150
mA
Peak collector current
I_CP
300
mA
Collector power dissipation
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.45^{+–00..12}
0.45^{+–00..12}
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 100 µA, I_E = 0
110
V
Collector-emitter voltage ^(Resistor
V_CER I_C = 500 µA, R_BE = 470 Ω
100
V
between B and E)
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
50
V
Emitter-base voltage (Collector open) V_EBO I_E = 100 µA, I_C = 0
3.5
V
Collector-emitter cutoff current (Base open) I_CEO V_CE = 35 V, I_B = 0
10
µA
Forward current transfer ratio
h_FE V_CE = 5 V, I_C = 100 mA
20

Collector-emitter saturation voltage
V_CE(sat) I_C = 150 mA, I_B = 15 mA
0.5
V
Transition frequency
f_T1 V_CB = 10 V, I_E = −10 mA, f = 200 MHz
300
MHz
f_T2 V_CB = 10 V, I_E = −110 mA, f = 200 MHz
350
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 30 V, I_E = 0, f = 1 MHz
3
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00133BED
1