2SC3526 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For display video output)

Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob.
q Wide current range.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
110
V
Collector to emitter voltage V_CER*
100
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
3.5
V
Peak collector current
I_CP
300
mA
Collector current
I_C
150
mA
Collector power dissipation P_C
1.0
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
*_{REB = 470Ω}
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CEO
V_CE = 35V, I_B = 0
10
µA
Collector to base voltage
V_CBO
I_C = 100µA, I_E = 0
110
V
Collector to emitter voltage
V_CER
I_C = 500µA, R_BE = 470Ω
100
V
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
50
V
Emitter to base voltage
V_EBO
I_E = 100µA, I_C = 0
3.5
V
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 100mA^*
20
Collector to emitter saturation voltage V_CE(sat)
I_C = 150mA, I_B = 15mA^*
0.5
V
Transition frequency
f_T1
V_CB = 10V, I_E = –10mA, f = 200MHz
300
f_T2
V_CB = 10V, I_E = –110mA, f = 200MHz
350
MHz
MHz
Collector output capacitance
C_ob
* _{Pulse measurement}
V_CB = 30V, I_E = 0, f = 1MHz
3
pF
1