2SC3507 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1000
V
V_CES
1000
V
Collector to emitter voltage
V_CEO
800
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
80
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO(sus)*
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
*_{VCEO(sus) Test circuit}
50/60Hz
mercury relay
Conditions
V_CB = 1000V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 0.5A, L = 50mH
V_CE = 5V, I_C = 3A
I_C = 3A, I_B = 0.6A
I_C = 3A, I_B = 0.6A
V_CE = 5V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 0.6A, I_B2 = –1.2A,
V_CC = 250V
X
L 50mH
120Ω
6V
Y
1Ω
15V
G
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min
typ
max Unit
50
µA
50
µA
800
V
6
1.5
V
1.5
V
6
MHz
1
µs
2.5
µs
0.5
µs
1