2SC3496 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) V_CBO
• Satisfactory linearity of forward current transfer ratio h_FE
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0) 1.3
Collector-base voltage 2SC3496 VCBO
900
V
(Emitter open)
2SC3496A
1 000
Collector-emitter voltage ^{2SC3496 V}CES
900
V
(E-B short)
2SC3496A
1 000
Collector-emitter voltage ^{2SC3496 V}CEO
800
V
(Base open)
2SC3496A
900
Emitter-base voltage (Collector open) V_EBO
7
V
Base current
I_B
0.3
A
Collector current
I_C
1
A
Peak collector current
I_CP
2
A
Collector power
P_C
30
W
dissipation
T_a = 25°C
1.3
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SC3496 V_CEO
2SC3496A
I_C = 1 mA, I_B = 0
800
V
900
Collector-base cutoff current ^{2SC3496 I}CBO
(Emitter open)
2SC3496A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 900 V, I_E = 0
V_CB = 1 000 V, I_E = 0
V_EB = 7 V, I_C = 0
V_CE = 5 V, I_C = 0.05 A
V_CE = 5 V, I_C = 0.5 A
I_C = 0.2 A, I_B = 0.04 A
I_C = 0.2 A, I_B = 0.04 A
V_CE = 10 V, I_C = 0.05 A, f = 1 MHz
I_C = 0.2 A
I_B1 = 0.04 A, I_B2 = − 0.08 A
V_CC = 250 V
50
µA
50
50
µA
6

3
1.5
V
1.0
V
4
MHz
1.0
µs
3.0
µs
1.0
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00104AED
1