2SC3354 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q High transition frequency f_T.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 100µA, I_E = 0
30
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
V
Forward current transfer ratio
h_FE
V_CB = 10V, I_E = –2mA
25
250
Base to emitter voltage
V_BE
V_CB = 10V, I_E = –2mA
720
mV
Common base reverse transfer capacitance C_rb
V_CE = 6V, I_C = 0, f = 1MHz
0.8
pF
Common emitter reverse transfer capacitance C_re
Transition frequency
f_T*
V_CE = 10V, I_C = 1mA, f = 10.7MHz
1
1.5
pF
V_CB = 10V, I_E = –15mA, f = 200MHz
600
1200 1600 MHz
Power gain
PG
V_CB = 10V, I_E = –1mA, f = 100MHz
17
dB
*_{hFE Rank classification}
Rank
T
S
f_T(MHz) 600 ~ 1300 900 ~ 1600
1