2SC3315 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC3315
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
15
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
V_CBO
V_EBO
h_FE*
I_C = 10µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 6V, I_E = –1mA
30
V
3
V
65
260
Base to emitter voltage
V_BE
V_CB = 6V, I_E = –1mA
720
mV
Common emitter reverse transfer capacitance C_re
V_CE = 6V, I_C = 1mA, f = 10.7MHz
0.8
1.0
pF
Transition frequency
f_T
V_CB = 6V, I_E = –1mA, f = 200MHz
450
650
MHz
Noise figure
NF
V_CB = 6V, I_E = –1mA, f = 100MHz
3.3
5.0
dB
Power gain
PG
V_CB = 6V, I_E = –1mA, f = 100MHz
20
24
dB
*_{hFE Rank classification}
Rank
C
h_FE
65 ~ 160
D
100 ~ 260
1