2SC3314 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 1mA
I_C = 10mA, I_B = 1mA
30
V
20
V
5
V
70
220
0.1
V
Base to emitter voltage
V_BE
V_CE = 10V, I_C = 1mA
0.7
V
Transition frequency
Noise figure
f_T
V_CB = 10V, I_E = –1mA, f = 200MHz 150
300
MHz
NF
V_CB = 10V, I_E = –1mA, f = 5MHz
2.8
4.0
dB
Common emitter reverse transfer capacitance C_re
Reverse transfer impedance
Z_rb
V_CE = 10V, I_C = 1mA, f = 10.7MHz
V_CB = 10V, I_E = –1mA, f = 2MHz
1.5
pF
50
Ω
*_{hFE Rank classification}
Rank
B
h_FE
70 ~ 140
C
110 ~ 220
1