2SC3313 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)

Transistor
2SC3313
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Optimum for RF amplification of FM/AM radios.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Common emitter reverse transfer capacitance
Reverse transfer impedance
V_CBO
V_CEO
V_EBO
h_FE*
C_re
Z_rb
I_C = 10µA, I_E = 0
30
I_C = 2mA, I_B = 0
20
I_E = 10µA, I_C = 0
5
V_CE = 10V, I_C = 1mA
70
V_CE = 10V, I_C = 1mA, f = 10.7MHz
V_CB = 10V, I_E = –1mA, f = 2MHz
V
V
V
250
1.6
pF
60
Ω
Transition frequency
f_T
V_CB = 10V, I_E = –1mA, f = 200MHz 150
250
MHz
*_{hFE Rank classification}
Rank
B
h_FE
70 ~ 160
C
110 ~ 250
1