2SC3312 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

Transistor
2SC3312
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1310
s ^Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Low noise voltage NV.
4.0±0.2
Unit: mm
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
55
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 5V, I_C = 2mA
55
V
7
V
180
700
Collector to emitter saturation voltage V_CE(sat)
Base to emitter voltage
V_BE
I_C = 100mA, I_B = 10mA
V_CE = 1V, I_C = 30mA
1
V
1
V
Transition frequency
f_T
V_CB = 5V, I_E = –2mA, f = 200MHz
200
MHz
Noise voltage
V_CE = 10V, I_C = 1mA, G_V = 80dB
NV
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1