2SC3187 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For small TV video output)

Transistor
2SC3187
Silicon NPN triple diffusion planer type
For small TV video output
s ^Features
q High collector to emitter voltage V_CEO.
q Small collector output capacitance C_ob.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
300
V
Collector to emitter voltage V_CEO
300
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
300
V
Collector to emitter voltage
V_CEO
I_C = 100µA, I_B = 0
300
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
7
V
Forward current transfer ratio
h_FE
V_CE = 50V, I_C = 5mA
50
250
Base to emitter voltage
V_BE
V_CE = 10V, I_C = 30mA
1.2
V
Collector to emitter saturation voltage V_CE(sat)
I_C = 30mA, I_B = 3mA
1.5
V
Transition frequency
f_T
V_CB = 30V, I_E = –20mA, f = 200MHz
70
140
MHz
Collector output capacitance
C_ob
V_CB = 30V, I_E = 0, f = 1MHz
1.9
pF
1