2SC3130 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s ^Features
q High transition frequency f_T.
q Small collector output capacitance C_ob and common base reverse
transfer capacitance C_rb.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1S
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 10V, I_E = 0
1
µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 4V, I_C = 5mA
10
V
3
V
75
200 400
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 4mA
0.5
V
Transition frequency
f_T
Collector output capacitance
C_ob
V_CB = 4V, I_E = –5mA, f = 200MHz
1.4
1.9
2.5 GHz
V_CB = 4V, I_E = 0, f = 1MHz
1.4
pF
Base time constant
r_bb' · C_C
V_CB = 4V, I_E = –5mA, f = 31.9MHz
11
ps
Common emitter reverse transfer capacitance C_rb
h_FE ratio
∆h_FE
V_CB = 4V, I_E = 0, f = 1MHz
V_CE = 4V, I_C = 100µA
V_CE = 4V, I_C = 5mA
0.45
pF
0.75
1.6
*_{hFE Rank classification}
Rank
P
h_FE
Marking Symbol
75 ~ 130
1SP
Q
110 ~ 220
1SQ
R
200 ~ 400
1SR
1