2SC3063 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For TV video output amplification)

Power Transistors
2SC3063
Silicon NPN triple diffusion planar type
For TV video output amplification
I Features
• High collector to emitter voltage V_CEO
• Small collector output capacitance C_ob
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
300
V
V_CEO
300
V
V_EBO
7
V
I_CP
200
mA
I_C
100
mA
P_C
1.2
W
T_j
150
°C
T_stg
−55 to +150
°C
8.0^{+–00..15}
φ 3.16±0.1
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1 : Emitter
123
2 : Collector
3 : Base
TO-126B-A1 Package
I Electrical Characteristics T_C = 25°C
Parameter
Symbol
Conditions
Min
Collector to base voltage
V_CBO
I_C = 10 µA, I_E = 0
300
Collector to emitter voltage
V_CEO
I_C = 0.1 mA, I_B = 0
300
Emitter to base voltage
V_EBO
I_E = 10 µA, I_C = 0
7
Forward current transfer ratio
h_FE
V_CE = 50 V, I_C = 5 mA
50
Base to emitter voltage
V_BE
V_CE = 10 V, I_C = 30 mA
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C = 30 mA, I_B = 3 mA
V_CB = 30 V, I_E = −20 mA, f = 200 MHz 70
V_CB = 30 V, I_E = 0, f = 1 MHz
Typ Max
250
1.2
1.5
140
2.4
Unit
V
V
V
V
V
MHz
pF
193