2SC2925 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification0

Transistor
2SC2925
Silicon NPN epitaxial planer type
For low-frequency output amplification
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
0.7
A
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
1
µA
10
µA
60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 150mA
50
V
15
V
400 1000 2000
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C = 500mA, I_B = 50mA
V_CB = 10V, I_E = –10mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
0.15
0.4
V
200
MHz
11
15
pF
*_{hFE Rank classification}
Rank
R
S
T
h_FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
1