2SC2671 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CER*
14
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
*_{REB = 1kΩ}
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
I_EBO
V_CB = 10V, I_E = 0
V_EB = 1V, I_C = 0
1
µA
1
µA
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
h_FE
f_T*
C_ob*
| S_21e |²
GUM^*
NF^*
V_CE = 8V, I_C = 40mA
50
150 300
V_CE = 8V, I_C = 40mA, f = 800MHz
3.5
5.5
GHz
V_CB = 10V, I_E = 0, f = 1MHz
0.8
1.5
pF
V_CE = 8V, I_C = 40mA, f = 800MHz
9
12
dB
V_CE = 8V, I_C = 40mA, f = 800MHz
10
13
15
dB
V_CE = 8V, I_C = 40mA, f = 800MHz
2.0
3.2
dB
Second inter modulation distortion IM_2*
V_CE = 8V, I_C = 40mA, f₁ = 200MHz
50
60
f₂ = 500MHz, V_O = 100dBµ/75Ω
dB
Third inter modulation distortion IM_3*
V_CE = 8V, I_C = 40mA, f₁ = 600MHz
75
86
f₂ = 500MHz, V_O = 100dBµ/75Ω
dB
*_{LTPD = 10%}
1