2SC2636 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)

Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
s ^Features
q High transition frequency f_T.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 100µA, I_E = 0
30
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
V
Forward current transfer ratio
h_FE
Base to emitter voltage
V_BE
Transition frequency
f_T*
V_CB = 10V, I_E = –2mA
25
V_CB = 10V, I_E = –2mA
720
mV
V_CB = 10V, I_E = –15mA, f = 200MHz 600 1200 1600 MHz
Power gain
PG
V_CB = 10V, I_E = –1mA, f = 100MHz
20
dB
Common base reverse transfer capacitance C_rb
V_CB = 6V, I_E = 0, f = 1MHz
0.8
pF
Common emitter reverse transfer capacitance C_re
V_CE = 10V, I_C = 1mA, f = 10.7MHz
1.5
pF
Base time constant
r_bb' · C_C
V_CB = 10V, I_E = –10mA, f = 31.9MHz
25
ps
*_{fT Rank classification}
Rank
T
S
f_T
600 ~ 1300 900 ~ 1600
1