2SC2634 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1127
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
55
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
Noise voltage
NV
Conditions
V_CB = 10V, I_E = 0
V_CE = 10V, I_B = 0
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 5V, I_C = 2mA
I_CE = 100mA, I_B = 10mA
V_CE = 1V, I_C = 30mA
V_CB = 5V, I_E = –2mA, f = 200MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
min
typ
max Unit
1
100
nA
0.01
1
µA
60
V
55
V
7
V
180
700
0.6
V
1
V
200
MHz
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1