2SC2631 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
s ^Features
q Satisfactory linearity of forward current transfer ratio h_FE.
q High collector to emitter voltage V_CEO.
q Small collector output capacitance C_ob.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
150
V
Collector to emitter voltage V_CEO
150
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 100V, I_E = 0
1
µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 0.1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 5V, I_C = 10mA
150
V
5
V
130
330
Collector to emitter saturation voltage V_CE(sat)
I_C = 30mA, I_B = 3mA
1
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
160
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
3
pF
Noise voltage
V_CE = 10V, I_C = 1mA, G_V = 80dB
NV
R_g = 100kΩ, Function = FLAT
150
300
mV
*_{hFE Rank classification}
Rank
R
h_FE
130 ~ 220
S
185 ~ 330
1