2SC2590 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Excellent collector current I_C characteristics of forward current
transfer ratio h_FE
• High transition frequency f_T
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
120
V
Collector-emitter voltage (Base open) V_CEO
120
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1.0
A
Collector power dissipation
P_C
1.2
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = 100 µA, I_B = 0
120
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
5
V
Forward current transfer ratio ^*1
h_FE1 ^*2 V_CE = 10 V, I_C = 150 mA
90
220

h_FE2 V_CE = 5 V, I_C = 500 mA
65 100
Collector-emitter saturation voltage
V_CE(sat) I_C = 300 mA, I_B = 30 mA
1.0
V
Base-emitter saturation voltage
V_BE(sat) I_C = 300 mA, I_B = 30 mA
1.2
V
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
11 20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
h_FE1
90 to 155 130 to 220
Publication date: January 2003
SJD00100BED
1