2SC2377 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
15
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
I_CBO
Collector cutoff current
I_CEO
Emitter cutoff current
I_EBO
Forward current transfer ratio
h_FE*
Base to emitter voltage
V_BE
Transition frequency
f_T
Noise figure
NF
Power gain
PG
Common emitter reverse transfer capacitance C_re
V_CB = 10V, I_E = 0
100
nA
V_CE = 20V, I_B = 0
10
µA
V_EB = 3V, I_C = 0
1
µA
V_CB = 6V, I_E = –1mA
65
260
V_CB = 6V, I_E = –1mA
720
mV
V_CB = 6V, I_E = –1mA, f = 100MHz
450
650
MHz
V_CB = 6V, I_E = –1mA
3.3
5
dB
V_CB = 6V, I_E = –1mA
20
24
dB
V_CE = 6V, I_C = 1mA
0.8
1
pF
*_{hFE Rank classification}
Rank
C
h_FE
65 ~ 160
D
100 ~ 260
1