2SC2295 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
s ^Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
C_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : V
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
Forward current transfer ratio
h_FE*
V_CB = 10V, I_E = 0
V_CB = 10V, I_E = –1mA
0.1
µA
70
220
Transition frequency
f_T
V_CB = 10V, I_E = –1mA, f = 200MHz 150
250
MHz
Noise figure
NF
Reverse transfer impedance
Z_rb
V_CB = 10V, I_E = –1mA, f = 5MHz
V_CB = 10V, I_E = –1mA, f = 2MHz
2.8
4
dB
22
50
Ω
Common emitter reverse transfer capacitance C_re
V_CE = 10V, I_C = 1mA, f = 10.7MHz
0.9
1.5
pF
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
1