2SC2258 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) V_CEO
• High transition frequency f_T
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
250
V
Collector-emitter voltage (Base open) V_CEO
250
V
Emitter-base voltage (Collector open) V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
Collector power dissipation
I_CP
150
mA
P_C
1.2 ^*1
W
4 ^*2
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
Note) _*1: Without heat sink
*2 ^{:With a 100 × 100 × 2 mm Al heat sink}
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
V_EBO
V_BE
I_CER
I_E = 0.1 mA, I_C = 0
V_CE = 20 V, I_C = 40 mA
V_CE = 250 V, R_BE = 100 kΩ
7
V
1.2
V
100 µA
Forward current transfer ratio
h_FE1 V_CE = 20 V, I_C = 40 mA
40

h_FE2 V_CE = 50 V, I_C = 5 mA
30
Collector-emitter saturation voltage
V_CE(sat) I_C = 50 mA, I_B = 5 mA
1.2
V
Transition frequency
f_T
V_CB = 10 V, I_E = −10 mA, f = 200 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 50 V, I_E = 0, f = 1 MHz
3.0 4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00098BED
1