2SC2209 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For low-frequency power amplification

Power Transistors
2SC2209
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA0963
■ Features
• Large collector power dissipation P_C
• Output of 5 W can be obtained by a complementary pair with
2SA0963
120°
7.5^{+–00..15}
Unit: mm
2.9±0.2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
40
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
1.5
A
Peak collector current
I_CP
3
A
Collector power dissipation ^*
P_C
10
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: T_C = 25°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.26±0.1
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^{*1, 2}
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C = 1 mA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 20 V, I_E = 0
V_CE = 10 V, I_B = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 1 A
I_C = 1.5 A, I_B = 0.15 A
I_C = 2 A, I_B = 0.2 A
V_CB = 5 V, I_E = − 0.5 A, f = 200 MHz
V_CB = 5 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
50
V
40
V
1
µA
100 µA
10
µA
80
220

1
V
1.5
V
150
MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
Q
R
h_FE
80 to 160 120 to 220
Publication date: January 2003
SJD00097BED
1